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US 5,851,909 AGranted
Method of producing semiconductor device using an adsorption layer
AssigneeSeiko Instruments Inc.
InventorsMasaaki Kamiya, Kenji Aoki, Naoto Saito
Life of this patent
Estimating the term…
Abstract
An impurity adsorption layer is formed on a substrate surface and solid-phase thermal diffusion is carried out to form source and drain regions for a metal-insulator-semiconductor field-effect-transistor having lightly doped drain structure or double doped drain structure. The thus formed impurity-doped region is ultrashallow, thereby producing high speed semiconductor devices of small dimensions.
Claims28
A method of producing a semiconductor device comprising:
- a) forming a gate insulating film on a substrate at a surface of a semiconductor region of the substrate, the region being of a first conductivity type, and forming a gate electrode on the gate insulating film;
- b) evacuating a chamber at a pressure of less than 1.times.10.sup.-4 Pa;
- c) removing an inert film from the substrate in the chamber by a reduction reaction in order to expose an active face on two sections of the semiconductor region spaced from each other by the gate electrode;
- d) applying to the surface of the substrate in the chamber a gas containing an impurity component of a second conductivity type while heating the substrate to a temperature greater than 800.degree. C. and not higher than a temperature of 825.degree. C. to form an impurity adsorption layer composed of impurity component atoms or of a compound containing at least impurity component atoms and constituting a diffusion source substantially only on the active face, and introducing the impurity component atoms into the semiconductor region of the first conductivity type from the diffusion source to thereby form a first impurity layer of low density in the surface of the two semiconductor region sections;
- and
- e) forming a second impurity layer having an impurity density higher than that of the first impurity layer in each section so that the second layer is contiguous to the first impurity layer.
3 more elements
A method of producing a semiconductor device, comprising:
- a) forming a gate insulating film on a surface of a region of a semiconductor substrate, the region being of a first conductivity type, and forming a gate electrode on the gate insulating film;
- b) introducing an impurity by ion implantation into two sections of the semiconductor region, the sections being separated from one another by the gate electrode, to form a first impurity layer;
- c) evacuating the chamber at a pressure of less than 1.times.10.sup.-4 Pa;
- d) removing an inert film from the substrate in the chamber by a reduction reaction in order to expose an active face of the ion-implanted semiconductor region;
- and
- e) applying to the surface of the substrate in the chamber a gas containing an impurity component of a second conductivity type while heating the substrate to a temperature greater than 800.degree. C. and not higher than a temperature of 825.degree. C. to form an impurity adsorption layer containing impurity component atoms and constituting a diffusion source substantially only on the active face, and introducing an impurity into the first impurity layer from the diffusion source to form a second impurity layer having a high impurity density in each section of the semiconductor region, the first and second layers forming a source and a drain in respective sections.
3 more elements
A method of producing a semiconductor device comprising:
- a) forming a gate insulating film on a substrate at a surface of a semiconductor region of the substrate, the region being of a first conductivity type, and forming a gate electrode on the gate insulating film;
- b) evacuating the chamber at a pressure of less than 1.times.10.sup.-4 Pa;
- c) removing an inert film from the substrate in the chamber by a heat treatment in order to expose an active face on two sections of the semiconductor region spaced from each other by the gate electrode;
- d) applying to the surface of the substrate in the chamber a gas containing an impurity component of a second conductivity type while heating the substrate to a temperature greater than 800.degree. C. and not higher than a temperature of 825.degree. C. to form an impurity adsorption layer composed of impurity component atoms or of a compound containing at least impurity component atoms and constituting a diffusion source substantially only on the active face, and introducing the impurity component atoms into the semiconductor region of the first conductivity type from the diffusion source to thereby form a first impurity layer of low density in the surface of the two semiconductor region sections;
- and
- e) forming a second impurity layer having an impurity density higher than that of the first impurity layer in each section so that the second layer is contiguous to the first impurity layer.
3 more elements
A method of producing a semiconductor device, comprising:
- a) forming a gate insulating film on a surface of a region of a semiconductor substrate, the region being of a first conductivity type, and forming a gate electrode on the gate insulating film;
- b) introducing an impurity by ion implantation into two sections of the semiconductor region, the sections being separated from one another by the gate electrode, to form a first impurity layer;
- c) evacuating the chamber at a pressure of less than 1.times.10.sup.-4 Pa;
- d) removing an inert film from the substrate in the chamber by a heat treatment in order to expose an active face of the ion-implanted semiconductor region;
- and
- e) applying to the surface of the substrate in the chamber a gas containing an impurity component of a second conductivity type while heating the substrate to a temperature greater than 800.degree. C. and not higher than a temperature of 825.degree. C. to form an impurity adsorption layer containing impurity component atoms and constituting a diffusion source substantially only on the active face, and introducing an impurity into the first impurity layer from the diffusion source to form a second impurity layer having a high impurity density in each section of the semiconductor region, the first and second layers forming a source and a drain in respective sections.
3 more elements
Dependencies are inferred from the claim text.