Loading patent…
OwnerReinhard Schwarz, Svetoslav Koynov +1inventors
InventorsReinhard Schwarz, Svetoslav Koynov, Thomas Fischer
Estimating the term…
The invention relates to a method of manufacturing microcrystalline layers from elements of the principal group IV, particularly Si, Ge, Sn or their alloys such as SiC or SiGe by means of cyclic CVD or related methods, a cycle comprising two steps. a first step for producing an amorphous layer of the element in such a way that compounds and hydrogen are passed under conventional CVD conditions through separate access means into the reactor over the substrate, and in that in a second step, a hydrogen treatment takes place, the supply of the process gas flow, the hydrogen flow and the connection of the CVD reactor to the pump being closed at least intermittently during the second step, so that the hydrogen treatment takes place in a closed CVD process (CC-CVD process) with the quantity of hydrogen or element hydrogen compounds located in the reactor.
A method of manufacturing microcrystalline layers from an element of the principal group IV with cyclic CVD in a reactor connected to a pump, the method comprising separately supplying hydrogen and a process gas into the reactor and producing an amorphous layer of the element under CVD conditions, and interrupting the supply of hydrogen, the supply of process gas and the connection to the pump and treating the amorphous layer with the hydrogen and the process gas present in the reactor in a closed CVD process to form a microcrystalline layer.
Dependencies are inferred from the claim text.