Semiconductor layer structure and recording medium for a large capacity memory
AssigneeHewlett-Packard Company
InventorIkuo Sakai
Life of this patent
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Abstract
A layered structure for a semiconductor substrate has a planar surface, lighter weight, and increased flexural rigidity. By decreasing warping in a multilayered recording medium that arises when forming the recording layer, while suppressing an increase in the weight of the memory substrate, a recording medium for a compact, large capacity memory device can be manufactured. The recording medium is positioned opposite a read/write circuit substrate that is provided with a plurality of miniature probes. A recording layer is formed on a front surface of a memory substrate, a beam structure for reinforcing flexural rigidity is formed on a back surface of said memory substrate. A conductive layer may be formed between the memory substrate and the recording layer.
Claims4
A method for forming a semiconductor structure, comprising the steps of:
- providing a semiconductor substrate;
- and
- forming a beam structure consisting of a wall or rib of vertical beams formed as a rectangular lattice or honeycomb on a back surface of said semiconductor substrate to reinforce the flexural rigidity of said substrate in accordance with a process comprising the steps of:
- providing an etching mask in the form of a photoresist on a back surface of said substrate that defines a pattern describing the wall or rib of vertical beams formed as a rectangular lattice or honeycomb;
- and
- etching said substrate back surface to form said beam structure.
A method for forming a recording medium for a large capacity memory device that is positioned opposite a read/write circuit substrate equipped with a plurality of miniature probes, comprising the steps of:
- providing a memory substrate;
- forming a beam structure consisting of a wall or rib of vertical beams formed as a rectangular lattice or honeycomb on a back surface of said memory substrate to reinforce the flexural rigidity of said substrate in accordance with a process comprising the steps of:
- providing an etching mask in the form of a photoresist on a back surface of said substrate that defines a pattern describing the wall or rib of vertical beams formed as a rectangular lattice or honeycomb;
- and
- etching said substrate back surface to form said beam structure;
- and
- forming a recording medium on a front surface of said memory substrate.
Dependencies are inferred from the claim text.