Method of forming stacked capacitor having corrugated side-wall structure

A method of forming a capacitor having improved charge storage comprising the steps of:

• providing a semiconductor substrate,
• forming a gate and an isolation on the surface of the substrate,
• blanket depositing a layer of a cell contact non-doped silicate glass,
• blanket depositing a plurality of oxide layers overlying said cell contact non-doped silicate glass layer by a deposition method alternating between a thermal CVD and a plasma CVD technique,
• etching through said plurality of oxide layers and said non-doped silicate glass layer to form a capacitor cell contact by a plasma etching technique,
• etching said plurality of oxide layers by an etchant having sufficient etch selectivity between thermal CVD and plasma CVD oxide layers such that a corrugated side-wall is formed in said capacitor cell after said etching step, and
• deposition semiconducting and dielectric layers in said capacitor cell to form said capacitor.