Method of forming a crown shape capacitor
AssigneeVanguard International Semiconductor Corporation
InventorsYu-Chun Ho, Hsiang-Wei Tseng
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Abstract
An etching process is used to etch the polysilicon layer. Then, Polymers are formed on the polysilicon layer after an ash step is performed. An organic layer is formed on the surface of the polysilicon layer, and on the polymers. An anisotropically etch is carried out to etch the organic layer, thereby forming organic side wall spacers on the side walls of the polysilicon layer. The etching is continuously performed to etch the polysilicon layer using the polymers and organic side wall spacers as masks. Next, an ash and a RCA clean procedure are performed to remove the residual polymers and the organic layer. A dielectric layer is then deposited on the surface of the polysilicon. A conductive layer is deposited over the dielectric layer.
Claims19
A method of fabricating a crown shape capacitor over a semiconductor substrate, said method comprising:
- forming a polysilicon layer over said semiconductor substrate;
- patterning said polysilicon layer, residual photoresist formed on said polysilicon layer;
- performing a first ash step to remove said residual photoresist, polymers being formed on said polysilicon layer and at edges of said polysilicon layer;
- forming an organic layer on a surface of said polysilicon layer, said polymers;
- etching said organic layer to form organic side-wall spacers on side walls of said polysilicon layer, then etching said polysilicon layer using said polymers, said organic side-wall spacers as an etching mask, thereby forming said polysilicon with crown shape structure to act as a first storage node of said capacitor;
- performing a second ash step to remove said polymers, said organic side-wall spacers;
- forming a dielectric layer on said crown shape structure;
- and
- forming a conductive layer over said dielectric layer to act as a second storage node of said capacitor.
A method of fabricating a crown shape silicon structure, said method comprising:
- providing a silicon layer over a semiconductor substrate;
- patterning said silicon layer, residual photoresist formed on said silicon layer;
- performing a first ash step to remove said residual photoresist, polymers being formed on said silicon layer and at edges of said silicon layer;
- forming an organic layer on a surface of said silicon layer, said polymers;
- etching said organic layer to form organic side-wall spacers on side walls of said silicon layer, then etching said silicon layer using said polymers, said organic side-wall spacers as an etching mask, thereby forming said crown shape silicon structure;
- and
- performing a second ash step to remove said polymers, said organic side-wall spacers.
Dependencies are inferred from the claim text.