US 5,851,868 A · Methods of forming integrated decoupling capacitors

Abstract

Methods of forming decoupling capacitors include the steps of forming an insulated first capacitor electrode on a first portion of a face of a semiconductor substrate containing a region of first conductivity type therein extending to the first portion of the face. A second capacitor electrode is formed on the insulated first capacitor electrode, opposite the region of first conductivity type. Inversion-layer charge source regions of second conductivity type are formed in the region of first conductivity type, so that second conductivity type charges carriers can be supplied to the first portion of the face when the first capacitor electrode is appropriately biased. A first capacitor contact is formed to electrically contact the insulated first capacitor electrode and a second capacitor contact is also formed to electrically connect the second capacitor electrode to the inversion-layer charge source regions.

Claims35

Dependent claims

A method of forming an integrated decoupling capacitor, comprising the steps of:

forming an insulated first capacitor electrode on a first portion of a face of a semiconductor substrate containing a region of first conductivity type therein extending to the first portion of the face;
forming a second capacitor electrode on the insulated first capacitor electrode, disposed opposite the region of first conductivity type at the first portion of the face;
forming an inversion-layer charge source region of second conductivity type in the region of first conductivity type;
forming a first conductivity type contact region in the region of first conductivity type;
forming a first capacitor contact electrically connected to the insulated first capacitor electrode;
and
forming a second capacitor contact electrically connected to the second capacitor electrode, the first conductivity type contact region and the inversion-layer charge source region.

4 more elements

A method of forming an integrated decoupling capacitor, comprising the steps of:

forming an insulated first capacitor electrode on a first portion of a face of a semiconductor substrate containing a region of first conductivity type therein extending to the first portion of the face;
forming a first electrically insulating layer on the insulated first capacitor electrode, opposite the first portion of the face;
forming a second capacitor electrode on the first electrically insulating layer, opposite the first capacitor electrode;
forming a third capacitor electrode on the second capacitor electrode, opposite the first capacitor electrode;
forming an inversion-layer charge source region of second conductivity type in the region of first conductivity type;
forming a first conductivity type contact region in the region of first conductivity type:
forming a first capacitor contact electrically coupled to the first capacitor electrode;
and
forming a second capacitor contact electrically connected to the inversion-layer charge source region, the first conductivity type contact region and the second or third capacitor electrode.

6 more elements

Dependencies are inferred from the claim text.

Methods of forming integrated decoupling capacitors

Life of this patent

Methods of forming integrated decoupling capacitors

Life of this patent

Abstract

Claims35