Rugged stacked oxide layer structure and method of fabricating same
AssigneeMosel Vitellic Incorporated
InventorsKuang-Chao Chen, Tuby Tu
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Abstract
The present invention relates to a rugged stacked oxide layer structure which remarkably increases an area of a subsequent deposition layer over the rugged stacked oxide layer. The enlargement of the area of a deposition layer over the rugged oxide layer enables one to ameliorate an electrical characteristic of a device and provide a higher integration density. For example, the rugged stacked oxide layer can be used to provide a higher capacitance by enlarging the area of a storage electrode of a capacitor. Similarly it can also be used to increase light absorption of a photodetector per unit area by enlarging an interfacial area of a P-N junction of the photodetector.
Claims10
A method of fabricating a rugged stacked oxide layer comprising the steps of:
- forming a lower layer of PE TEOS on a silicon substrate;
- and
- subsequently depositing an upper layer of O.sub.3 /TEOS on the lower layer of PE TEOS at a temperature between 300.degree.-500.degree. C. to form the rugged stacked oxide layer.
A method of fabricating a rugged stacked oxide layer comprising the steps of:
- forming a lower layer of nitride on a silicon substrate by a LPCVD or a PECVD method;
- and
- subsequently depositing an upper layer of O.sub.3 /TEOS on the lower layer of nitride at a temperature between 330.degree.-500.degree. C. to form the rugged stacked oxide layer.
Dependencies are inferred from the claim text.