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US 5,851,858 AGranted
Method for producing a multiplicity of microelectronic circuits on SOI
AssigneeSiemens Aktiengesellschaft
InventorKarlheinz Mueller
Life of this patent
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Abstract
A method for producing a multiplicity of microelectronic circuits on SOI produces n-CMOS or p-CMOS transistors, NPN transistors or PNP transistors, for instance, through the use of a standardized process, in an especially simple way. All that is required to do so is to adapt the implantations that are performed.
Claims12
A method for producing a multiplicity of microelectronic circuits on silicon on insulator substrate, which comprises:
- defining a multiplicity of active regions in an insulator material;
- implanting an n-well or a p-well in each of the active regions, depending on a structure to be created;
- creating and defining a gate oxide layer in partial regions of the active region;
- applying a polysilicon layer;
- n.sup.+ or p.sup.+ doping a region of the polysilicon layer located above the well, depending on the structure to be created;
- etching the polysilicon layer for exposing portions of the active regions;
- performing an oxidation of the polysilicon layer and of the active regions previously etched bare, to form a second oxide layer;
- performing a p.sup.- or n.sup.- implantation, depending on the structure to be created;
- diffusing implanted dopants into underlying well regions;
- applying a third oxide layer;
- and
- performing contacting.
9 more elements
Dependencies are inferred from the claim text.