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US 5,851,852 AGranted
Die attached process for SiC
AssigneeNorthrop Grumman Corporation
InventorsJohn A. Ostop, Li-Shu Chen
Life of this patent
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Abstract
A die attach procedure for SiC uses the scrubbing technique to bond a SiC die to a package. A first layer is formed on the SiC die. This first layer, preferably of nickel, bonds to the SiC die. A second layer, preferably amorphous silicon, is then formed on the first layer. The second layer bonds to the first layer, and forms a eutectic with the material, usually gold, plating the package when the SiC die is scrubbed onto the package.
Claims11
A die attach procedure for SiC, comprising:
- (a) providing a package with a plating thereon;
- (b) providing a SiC die;
- (c) forming a first layer on said SiC die which bonds to said SiC die;
- (d) forming a second layer on said first layer which bonds to said first layer;
- and
- (e) scrubbing said SiC die on said package such that said second layer bonds to said package.
3 more elements
Dependencies are inferred from the claim text.