Method for fabricating a gap type semiconductor substrate of red light emitting devices
AssigneeShin-Etsu Handotai Co., Ltd.
InventorsMunehisa Yanagisawa, Susumu Higuchi, Yuuki Tamura, Akio Nakamura, Toshio Otaki
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Abstract
A semiconductor substrate for GaP type light emitting devices which includes an n-type single crystal substrate, an n-type GaP layer, and a p-type GaP layer formed on the n-type GaP single crystal substrate. The carbon concentration in the n-type GaP single crystal substrate is more than 1.0.times.10.sup.16 atoms/cc but less than 1.0.times.10.sup.17 atoms/cc. The n-type GaP single crystal substrate is obtained from an n-type GaP single crystal grown by the Liquid Encapsulation Czochralski method wherein B.sub.2 O.sub.3 containing water corresponding to 200 ppm or more is used as an encapsulation liquid.
Claims5
A method for fabricating a GaP type semiconductor substrate of red light emitting devices comprising the steps of:
- growing an n-type single crystal containing more than 1.0.times.10.sup.16 but less than 1.0.times.10.sup.17 atoms/cc carbon by the Liquid Encapsulation Czochralski method using B.sub.2 O.sub.3 as an encapsulation liquid, wherein said B.sub.2 O.sub.3 contains at least 200 ppm water;
- and;
- forming an n-type GaP layer and a p-type GaP layer successively on a semiconductor substrate obtained from said n-type GaP single crystal.
Dependencies are inferred from the claim text.