Photolithographic pattern generation
AssigneeSiemens Aktiengesellschaft
InventorsRecai Sezi, Rainer Leuschner, Erwin Schmidt
Life of this patent
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Abstract
In a method for producing photolithographic patterns in the submicron range, applied on a substrate is a photoresist layer comprised of a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups, a photoactive component--in the form of an ester of a naphthoquinonediazide-4-sulfonic acid with an aromatic or aliphatic-aromatic hydroxy compound--and a suitable solvent; the photoresist layer is then dried, exposed in an imaging manner, and subjected to a temperature treatment in the range of between 120.degree. and 150.degree. C. for a duration of 100 to 600 seconds. The photoresist layer is then subjected to a liquid silylation and is dry-developed in an anisotropic oxygen plasma.
Claims10
A method for producing photolithographic patterns in the submicron range, comprising the steps of:
- applying onto a substrate a photoresist layer comprising
- a polymer containing carboxylic acid anhydride groups and tert. butylester or tert. butoxy-carbonyloxy groups,
- a photoactive component in the form of an ester of a naphthoquinonediazide-4-sulfonic acid having a structure of ##STR2## with an aromatic or aliphatic-aromatic hydroxy compound, the residues R signifying--independently of one another--hydrogen, alkyl, halogenalkyl, alkoxy, phenyl, halogenphenyl, phenoxy or halogen, and a suitable solvent;
- drying the photoresist layer;
- exposing the photoresist layer in an imaging manner;
- subjecting the exposed photoresist layer to a temperature treatment in the range of between 120.degree. and 150.degree. C. for a duration of 100 to 600 seconds;
- subjecting the thus treated photoresist layer to liquid silylation;
- and
- dry-developing the silylated photoresist layer in an anisotropic oxygen plasma.
Dependencies are inferred from the claim text.