Method for thermal chemical vapor deposition
AssigneeNihon Shinku Gijutsu Kabushiki Kaisha
InventorsIzumi Nakayama, Akitoshi Suzuki, Yoshiro Kusumoto, Kazuo Takakuwa, Tetsuya Ikuta
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Abstract
A method and an apparatus for a CVD comprising feeding a first gas flow, including a reactive gas, in a laminar flowing state and in a sheet state parallel to the surface of a substrate and feeding a second gas flow, including a non-reactive gas, in a direction perpendicular to that of said first gas flow, externally controlling the flow rates of the first and second gases so as to retain the laminar flowing state of said first gas flow and concentrate said first gas flow in the vicinity of said substrate and externally controlling the flow rate of said second gas flow to provide control and uniformity in the thickness of the layer to be formed.
Claims4
A method of thermal chemical vapor deposition comprising the steps of feeding a first gas flow containing reactive gas in a sheet state in parallel with a surface of a heated substrate in a reaction chamber;
- feeding a second gas flow containing a non-reactive gas perpendicularly towards the surface of the substrate to suppress the diffusion of the first gas flow and to stabilize and laminarize the first gas flow;
- and externally controlling the flow rates of the first and second gas flows so as to maintain the first gas flow containing the reactive gas in said laminarized flow condition, localize it in the vicinity of the substrate and provide uniformly a film or layer on the surface of the substrate.
Dependencies are inferred from the claim text.