Back to results
US 5,851,581 AGranted
Semiconductor device fabrication method for preventing tungsten from removing
AssigneeNEC Corporation
InventorMasanobu Zenke
Life of this patent
Estimating the term…
Abstract
A contact is formed in an insulating film covering on a silicon substrate and thereafter an amorphous silicon film is deposited thereon at 400.degree. to 500.degree. C. by using disilane. A tungsten film is then formed and etched back to form a tungsten plug through etch-back.
Claims12
A method for fabricating a semiconductor device comprising the steps of:
- depositing an amorphous silicon film on a hole in an insulating film covering a semiconductor substrate by a low-pressure CVD process using a thermal decomposition of a disilane gas in a first chamber at a first temperature between 400.degree. and 500.degree. C.;
- and
- depositing a tungsten film on said amorphous silicon film by a CVD process in the first chamber at a second temperature;
- said first temperature being substantially equal to said second temperature so that said amorphous silicon film and said tungsten film are continuously deposited in the same chamber wherein between depositing the amorphous silicon film and depositing the tungsten film, the step of decreasing without stopping an input flow of the disilane gas into the first camber and introducing a tungsten gas into the first chamber so that a flow rate between the disilane gas and the tungsten film depositing gas in about 1:2.
1 more element
A method for fabricating a semiconductor device comprising the steps of:
- forming an insulating film on a semiconductor substrate;
- selectively removing said insulating film to form a hole in said insulating film, said insulating film thereby having a side surface defining said hole and a top surface extending from said side surface;
- depositing in a first chamber at a first temperature between 400.degree. and 500.degree. C. amorphous silicon film on said top surfaces and side surface of said insulating film by a thermal decomposition of disilane;
- and amorphous silicon film thereby having a portion surrounded by side surface of said insulated film;
- forming tungsten nuclei on said amorphous silicon film in the first chamber at substantially the first temperature;
- and
- growing said tungsten nuclei at substantially the first temperature to fill said hole by tungsten film so that said amorphous silicon film and said tungsten nuclei are continuously deposited in the same chamber wherein between depositing the amorphous silicon film and depositing the tungsten nuclei, the step of decreasing without stopping an input flow of the disilane gas into the first chamber and introducing a tungsten nuclei depositing gas into the first chamber so that a flow rate ratio between the disilane gas the tungsten film nuclei depositing gas is about 1:2.
4 more elements
Dependencies are inferred from the claim text.