Semiconductor device and liquid crystal display apparatus using the same
AssigneeHitachi, Ltd.
InventorsTakeshi Tanaka, Yoshiro Mikami
Life of this patent
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Abstract
A liquid crystal display apparatus has a display region in the substrate and a peripheral circuit region for driving the display region formed in the periphery, and monopolar thin film semiconductor elements and bipolar thin film semiconductor elements are formed in the peripheral circuit region and monopolar thin film semiconductor elements or bipolar thin film semiconductor elements are formed in the display region. In the semiconductor film of the monopolar semiconductor element and the bipolar semiconductor element, both of a zone containing a high concentration n-type impurity and a zone containing a high concentration p-type impurity are formed. The liquid crystal display apparatus consumes a small amount of electric power.
Claims21
A liquid crystal display apparatus, comprising:
- a pair of substrates, at least one of said pair of substrates being transparent, a liquid crystal layer formed by filling a liquid crystal material between said pair of substrates;
- one of said pair of substrates comprising a display region having a plurality of first semiconductor elements disposed on a matrix and a peripheral circuit region having a plurality of second semiconductor elements and being disposed on the periphery of said display region to drive said plurality of first semiconductor elements;
- each of said plurality of second semiconductor elements in said peripheral circuit region having a bipolar semiconductor element and a monopolar semiconductor element;
- and
- wherein said first and second semiconductor elements are thin film semiconductor elements, respectively, and said bipolar and monopolar thin film semiconductor elements, composing said second semiconductor element, have a gate electrode formed on said substrate and a semiconductor layer formed on the gate electrode through an insulator film, said semiconductor layer having a p.sup.+ -zone and an n.sup.+ -zone respectively disposed adjacent both sides of said gate electrode.
A semiconductor device comprising a substrate, and monopolar thin film semiconductor elements and bipolar thin film semiconductor elements formed on said substrate, wherein:
- each monopolar thin film semiconductor element and each bipolar thin film semiconductor element has a gate electrode formed on said substrate and a semiconductor layer formed on the gate electrode through an insulator film;
- said semiconductor layer has a p.sup.+ -zone and an n.sup.+ -zone respectively disposed adjacent both sides of said gate electrode;
- one of said p.sup.+ -zone and said n.sup.+ -zone in said semiconductor layer of said monopolar thin film semiconductor element is disposed outside the range of the region of the gate electrode as seen from the vertical direction of said substrate;
- and
- said p.sup.+ -zone and said n.sup.+ -zone in said semiconductor layer of said bipolar thin film semiconductor element are disposed within the range of the region of the gate electrode as seen from the vertical direction of said substrate.
Dependencies are inferred from the claim text.