Thermally uniform transistor
AssigneeTexas Instruments Incorporated
InventorWilliam Uei-Chung Liu
Life of this patent
Estimating the term…
Abstract
Generally, and in one form of the invention, a method for fabricating a transistor having a plurality of active regions comprising spacing or shaping the emitters 20 and 22, or gates, in a non-uniform manner to provide a substantially constant temperature over an active region of the transistor is disclosed. An advantage of the invention is that the occurrence of a thermal runaway condition between transistor current and temperature is generally avoided.
Claims9
A transistor comprising a plurality of active regions arranged about a center point in a semiconductor substrate, each of said active regions adjacent one another and evenly spaced from said center point and comprising an elongate control structure having a length and a width, wherein said width of said control structure is progressively greater in said plurality for active regions further from said center point.
A transistor comprising a plurality of active regions arranged about a center point in a semiconductor substrate, each of said active regions adjacent one another and comprising an elongate control structure having a length and a width, wherein said length of said control structure is progressively greater in said plurality for active regions further from said center point.
Dependencies are inferred from the claim text.