Semiconductor processing methods of chemical vapor depositing SiO.sub.2 on a substrate

A semiconductor processing method of reducing the decomposition rate of an organic silicon precursor in a chemical vapor deposition process of depositing SiO.sub.2 on a substrate within a chemical vapor deposition reactor comprising feeding at least one of H.sub.2 O and H.sub.2 O.sub.2 into the reactor while feeding the organic silicon precursor wherein the feeding steps collectively comprise:

• mixing a quantity of the organic silicon precursor in liquid form and a quantity of the at least one of H.sub.2 O and H.sub.2 O.sub.2 in liquid form to form a liquid mixture;
• converting the liquid mixture to a gaseous mixture;
• and
• feeding the gaseous mixture into the reactor.

A semiconductor processing method of chemical vapor depositing SiO.sub.2 on a substrate comprising:

• placing a substrate within a chemical vapor deposition reactor;
• and
• feeding an organic silicon precursor and feeding an oxide of hydrogen into the chemical vapor deposition reactor having the substrate positioned therein under conditions effective to deposit an SiO.sub.2 LAYER on the substrate, wherein the feeding steps collectively comprise:
• mixing a quantity of the organic silicon precursor in liquid form and a quantity of the oxide of hydrogen in liquid form to form a liquid mixture, the liquid mixture comprising less than about 15% by volume of the oxide of hydrogen;
• heating the liquid mixture to a temperature sufficient to produce a gas containing at least some organic silicon precursor and at least some oxide of hydrogen;
• and
• feeding the produced gas into the reactor.

A semiconductor processing method of chemical vapor depositing SiO.sub.2 on a substrate comprising:

• placing a substrate within a chemical vapor deposition reactor;
• mixing a quantity of an organic silicon precursor in liquid form and a quantity of an oxide of hydrogen in liquid form to form a liquid mixture, the organic silicon precursor being selected from the group consisting of:
• tetraethoxysilane (TEOS), diethylsilane (DES), tetramethylcyclo-tetrasiloxane (TMCTS), and fluorotrialkoxysilane, the oxide of hydrogen comprising H.sub.2 O, the quantity of the oxide of hydrogen comprising between about 5%-15% of the liquid mixture volume;
• converting the liquid mixture to a gaseous mixture by heating the liquid mixture to a temperature of between about 65.degree. C. to 80.degree. C.;
• and
• feeding the gaseous mixture into the reactor.

A semicondutor processing method of chemical vapor depositing SiO.sub.2 on a substrate comprising:

• placing a substrate within a chemical vapor deposition reactor;
• mixing a quantity of an organic silicon precursor in liquid form and a quantity of an oxide of hydrogen in liquid form to form a liquid mixture, the organic silicon precursor being selected from the group consisting of:
• tetraethoxysilane (TEOS), diethylsilane (DES), tetramethylcyclo-tetrasiloxane (TMCTS), and fluorotrialkoxysilane, the oxide of hydrogen comprising H.sub.2 O.sub.2, the quantity of the oxide of hydrogen comprising between about 5%-15% of the liquid mixture volume;
• converting the liquid mixture to a gaseous mixture including heating the liquid mixture to a temperature a between about 65.degree. C. to 80.degree. C.;
• and
• feeding the gaseous mixture into the reactor.