Method of fabricating specimen for exposing defects of a semiconductor device for observation and analysis
AssigneeHyundai Electronics Industries Co., Ltd.
InventorsJeong-Hoi Koo, Doo-Jin Park
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Abstract
A method of fabricating a specimen for the observation and analysis of defects in a wafer includes the steps of: locating a position of a defect which exists in a patterned layer of a wafer on which a semiconductor device is formed; forming a photoresist layer on an outer side of the patterned layer at the position; drilling the wafer to form a hole from an underlying, outer portion of the wafer to the outer side, i.e., a top portion of the patterned layer where the diameter of the hole formed gradually decreases from the underlying portion to the top portion; and etching the drilled portion to remove the remaining residue.
Claims8
A method of fabricating a specimen for analyzing defects in a patterned layer of a semiconductor wafer having said patterned layer formed on a silicon substrate at an interface between facing inner sides of the substrate and the patterned layer, comprising the steps of:
- locating a position having a defect in the patterned layer of the wafer on which a semiconductor device is formed;
- forming a photoresist layer on an outer side of the patterned layer parallel to said facing inner sides at said position;
- drilling a portion of said wafer to form a drilled portion from an outer side of the substrate parallel to said facing inner sides to the outer side of the patterned layer wherein a diameter of the drilled portion gradually decreases from said outer side of the substrate layer to said outer side of said patterned layer;
- and
- etching the drilled portion to remove a remaining residue thereby exposing the defect for observation.
A method of fabricating a specimen for analyzing the defects in a patterned layer of a semiconductor wafer having said patterned layer formed on a silicon substrate at an interface between facing inner sides of the substrate and the patterned layer, comprising the steps of:
- locating a position having a defect in a patterned layer of a wafer on which a semiconductor device is formed;
- forming a photoresist layer on an outer side of the patterned layer parallel to said facing inner sides at said position;
- drilling a portion of said wafer to form a drilled portion from an outer side of the substrate parallel to said facing inner sides to the outer side of the patterned layer wherein a diameter of the drilled portion gradually decreases from said outer side of the substrate layer to said outer side of said patterned layer;
- etching the drilled portion to remove a remaining residue;
- covering other portions of the wafer except the defective portion with aluminum foil;
- and
- removing the photoresist layer thereby exposing the defect for observation.
Dependencies are inferred from the claim text.