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US 5,849,638 AGranted
Deep trench with enhanced sidewall surface area
AssigneeInternational Business Machines Corporation
InventorsHerbert Lei Ho, David Edward Kotecki, Carl John Radens
Life of this patent
Estimating the term…
Abstract
The present invention includes a method and system to increase the deep trench sidewall surface area in a storage node on a DRAM chip. By tilting the trenches the capacitance is increased without taking up more space on the semiconductor chip.
Claims16
A method of fabricating a storage node, comprising the steps of:
- opening a trench mask at a location;
- opening the location at a first angle;
- etching a first trench with a wafer tilted at the first angle;
- opening the location at a second angle different from the first angle;
- and
- etching a second trench with the wafer tilted at the second angle.
3 more elements
A method of fabricating a storage node for a deep-trenched based DRAM, comprising the steps of:
- opening a trench mask at a location;
- opening the location at a first angle;
- etching a first trench with a wafer tilted at the first angle;
- opening the location at a second angle different from the first angle;
- and
- etching a second trench with the wafer tilted at the second angle.
3 more elements
Dependencies are inferred from the claim text.