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US 5,849,634 AGranted
Method of forming silicide film on silicon with oxygen concentration below 10.sup.18 /cm.sup.3
OwnerHiroshi Iwatainventor
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Abstract
A method for fabricating a semiconductor device of the invention, the method includes the steps of: providing an oxygen concentration in a region of a silicon film of 1.times.10.sup.18 cm.sup.3 or less; depositing a film including a metal on the silicon film; and reacting the silicon film with the film including a metal so as to form a metal silicide film in the region of the silicon film.
Claims20
A method for fabricating a semiconductor device, the method comprising the steps of:
- providing an oxygen concentration in a region of a silicon film of 1.times.10.sup.18 cm.sup.-3 or less;
- depositing a film including a metal on the silicon film;
- and
- reacting the silicon film with the film including a metal so as to form a metal silicide film in the region of the silicon film, wherein the region of the silicon film includes a surface of the silicon film and an interior portion of the silicon film underlying the surface.
1 more element
Dependencies are inferred from the claim text.