Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• patterning a first polyimide film on a semiconductor substrate;
• patterning a ball limiting metal film;
• patterning a second polyimide film;
• performing a heat-treatment for hardening said second polyimide film and simultaneously annealing said ball limiting metal film in an atmosphere having an oxide concentration being a value not allowing oxidation of said ball limiting metal film or less, said performing said heat-treatment step prior to application of a bump forming metal film;
• patterning a bump forming metal film;
• and
• wet-back processing said bump forming metal film.

A method of manufacturing a semiconductor device, comprising the steps of:

• patterning a first passivation film on a semiconductor substrate;
• patterning a ball limiting metal film;
• patterning a second passivation film;
• performing a heat-treatment for hardening said second passivation film and simultaneously annealing said ball limiting metal film, said heat treatment being performed in an atmosphere having an oxygen concentration of 50 ppm or less at a temperature of from 300.degree. to 400.degree. C. for 10 to 30 minutes before application of a bump forming metal film;
• patterning a bump forming metal film;
• and
• wet-back processing said bump forming metal film.