Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Trung T. Doan
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Abstract
A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.
Claims34
A method for manufacturing a capacitor having a plate formed of rough polysilicon, said method comprising the steps of:
- (a) forming the plate by introducing reactant gas into a deposition chamber containing said substrate and selectively and repeatedly enabling and disabling a plasma to deposit said rough polysilicon on said substrate;
- (b) forming a dielectric layer on said rough polysilicon;
- and
- (c) forming a conductive plate on said dielectric layer.
A method for fabricating a semiconductor device, the method comprising the steps of:
- (a) introducing reactant gas into a deposition chamber containing a substrate;
- and
- (b) controllably pulsing a plasma within the deposition chamber to deposit a layer of rough polysilicon onto the substrate.
A method for fabricating a semiconductor device, the method comprising the steps of:
- (a) introducing reactant gas into a deposition chamber containing a substrate;
- and
- (b) repeatedly ionizing and de-ionizing the reactant gas within the deposition chamber to deposit a layer of rough polysilicon onto the substrate.
A method for fabricating a semiconductor device, the method comprising the steps of:
- (a) introducing reactant gas consisting of an inert carrier gas and a silicon source gas adjacent a substrate;
- (b) ionizing the reactant gas to create a plasma;
- and
- (c) controllably pulsing the plasma to deposit a layer of rough polysilicon onto the substrate.
A method for fabricating a capacitor on a semiconductor device, the method comprising the steps of:
- (a) introducing reactant gas into a deposition chamber containing a substrate;
- (b) ionizing the reactant gas to create a plasma;
- (c) controllably pulsing the plasma to deposit a layer of rough polysilicon onto the substrate to form a first plate of the capacitor;
- (d) depositing a layer of dielectric material over the layer of rough polysilicon;
- and
- (e) depositing a layer of conductive material over the layer of dielectric material to form a second plate of the capacitor.
A method for fabricating a capacitor on a semiconductor device, the method comprising the steps of:
- (a) introducing reactant gas comprising an inert gas and a silicon source gas into a deposition chamber containing a substrate;
- (b) ionizing the reactant gas to create a plasma;
- (c) controllably pulsing the plasma at a frequency in a range from 25 hertz to 1 k hertz and at a duty cycle in a range from 10% to 90% to deposit a layer of rough polysilicon onto the substrate to form a first plate of the capacitor;
- (d) depositing a conformal layer of dielectric material over the layer of rough polysilicon;
- and
- (e) depositing a layer of conductive material over the layer of dielectric material to form a second plate of the capacitor.
Dependencies are inferred from the claim text.