US 5,849,625 A · Planar field oxide isolation process for semiconductor integrated circuit devices using liquid phase deposition

Abstract

A process for fabricating an improved planar field oxide (FOX) structure on a silicon substrate was achieved. The process involves forming recessed areas in the silicon substrate where the field oxide is require. A thin silicon oxide is formed on the surface of the recessed areas as a nucleation layer and then a thicker silicon oxide layer is selectively deposited in the recess areas by Liquid Phase Deposition (LPD). The planar FOX structure formed by LPD can be used in conjunction with a FOX structure formed by the conventional LOCal Oxidation of Silicon (LOCOS) process on the same substrate. The planar field oxide formed by LPD eliminates the bird beak structure and the lateral diffusion of the channel stop implant commonly associated with the LOCOS structure.

Claims15

Dependent claims

A method for fabricating an integrated circuit device, comprising:

providing a semiconductor substrate having a surface;
forming trenches extending into the substrate, the trenches having trench surfaces recessed below the surface of the substrate;
immersing the trenches in water to form a seed layer of silicon oxide on the trench surfaces;
and
selectively depositing by liquid phase deposition silicon oxide within the trenches.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

08/807,885Filed 26 Feb 1997 · continuation

Priority

7 Dec 1994

Granted

15 Dec 1998

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10W 10/13
Isolation regions comprising dielectric materials: formed using local oxidation of silicon [LOCOS], e.g. sealed interface localised oxidation…
H10W 10/0121
Using local oxidation of silicon [LOCOS]: in regions recessed from the surface, e.g. in trenches or grooves
H10W 10/0148
Using trench refilling with dielectric materials, e.g. shallow trench isolations: comprising introducing impurities in side walls or bottom walls…
H10W 10/17
Isolation regions comprising dielectric materials: formed using trench refilling with dielectric materials, e.g. shallow trench isolations

Planar field oxide isolation process for semiconductor integrated circuit devices using liquid phase deposition

Life of this patent

Planar field oxide isolation process for semiconductor integrated circuit devices using liquid phase deposition

Life of this patent

Abstract

Claims15