Method for producing a semiconductor device comprising an implantation step
AssigneeABB Research Ltd.
InventorsChristopher Harris, Kurt Rottner
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Abstract
A method for producing a semiconductor device having a semiconductor layer of SiC is disclosed. The method comprises the steps of applying an insulation layer on the semiconductor layer, implanting first impurity dopant into the semiconductor layer, and annealing this layer at at least about 1500.degree. C. so that the implanted first impurity dopant is activated, wherein the insulating layer comprises AlN as a major component and the insulating layer is applied before the annealing step and maintained on the semiconductor layer during the annealing step.
Claims18
A method for producing a semiconductor device having a semiconductor layer of SiC, said method comprising the steps of:
- applying an insulation layer on said semiconductor layer,
- implanting first impurity dopant into said semiconductor layer,
- annealing said semiconductor layer at at least about 1500.degree. C. so that the implanted first impurity dopant is activated, and
- applying a gate electrode of refractory metal on said insulating layer before any self-aligned implantation,
- wherein said insulating layer comprises AIN as a major component and said insulating layer is applied before said annealing step and maintained on said semiconductor layer during said annealing step.
Dependencies are inferred from the claim text.