Method for formation of capacitors

A method for formation of a capacitor for a DRAM, comprising the steps of:

• providing a substrate;
• forming an insulating layer on the substrate;
• forming a contact hole through the insulating layer to the substrate;
• forming a first conductive layer on said insulating layer and in said contact hole;
• forming a temporary layer pattern on a portion of said first conductive layer corresponding to said contact hole;
• forming a second conductive layer on said first conductive layer and on said temporary layer pattern;
• forming a temporary sidewall spacer on a sidewall of said second conductive layer corresponding to a side face of said temporary layer pattern;
• selectively implanting oxygen ions into exposed portions of said second conductive layer and into said first conductive layer lying thereunder, respectively;
• heat treating so as to convert said oxygen-ion-implanted first and second conductive layer portions into an oxide;
• removing said oxide and the temporary layer pattern;
• forming a dielectric layer on surfaces of said first and second conductive layers;
• and
• forming a third conductive layer on said dielectric layer.