Plasma processing method and plasma processing apparatus

A plasma processing apparatus comprising:

• (a) a chamber connected to an evacuation means and a source gas-feeding means;
• (b) a second electrode provided in the chamber so as to oppose a substrate arranged in the chamber to be processed in the chamber, said substrate also serving as a first electrode;
• (c) a high frequency power source for applying a high frequency power within a frequency range from 20 MHz to 450 MHz between the substrate and the second electrode;
• and
• (d) a DC power source for applying a DC voltage from +100 V, to +300 V or from -300 V to -100 V, to the first electrode.

A plasma processing method which comprises:

• (a) introducing a source gas into a chamber, said chamber connected to an evacuation means and a source gas-feeding means;
• (b) applying a high frequency power within a frequency range from 20 MHz to 450 MHz between (i) a first electrode provided in said chamber and (ii) a second electrode opposing the first electrode;
• and
• (c) applying an AC voltage of a lower frequency than the high frequency power to the first electrode, thereby decomposing said source gas and subjecting a surface of the first electrode to plasma processing.

A plasma processing apparatus comprising:

• (a) a chamber connected to an evacuation means and a source gas-feeding means;
• (b) a second electrode provided in the chamber so as to oppose a substrate arranged in the chamber to be processed in the chamber, said substrate also serving as a first electrode;
• (c) a high frequency power source for applying a high frequency power within a frequency range from 20 MHz to 450 MHz between the substrate and the second electrode;
• and
• (d) an AC power source for applying an AC voltage of a lower frequency than the high frequency power to the first electrode.

A plasma processing method which comprises:

• (a) introducing a source gas into a chamber, said chamber connected to an evacuation means and a source gas-feeding means;
• (b) applying a high frequency power within a frequency range from 20 MHz to 450 MHz between (i) a first electrode provided in said chamber and (ii) a second electrode opposing the first electrode;
• and
• (c) applying an AC voltage within a range from .+-.30 V t .+-.600 V to the first electrode, thereby decomposing said source gas and subjecting a surface of the first electrode to plasma processing.

A plasma processing apparatus comprising:

• (a) a chamber connected to an evacuation means and a source gas-feeding means;
• (b) a second electrode provided in the chamber so as to oppose a substrate arranged in the chamber to be processed in the chamber, said substrate also serving as a first electrode to be processed and a second electrode opposing the first electrode provided in the chamber;
• (c) a high frequency power source for applying a high frequency power within a frequency range from 20 MHz to 450 MHz between the substrate and the second electrode;
• and
• (d) an AC power source for applying an AC voltage within a range from .+-.30 V to .+-.600 V to the first electrode.