A light receiving member comprising an electrically conductive substrate, a photoconductive layer comprising a non-single crystalline material containing at least silicon atoms as a matrix formed on said substrate by decomposing a silicon-containing raw material gas, and a surface protective layer comprising a non-single crystalline carbon material containing hydrogen atoms formed on said photoconductive layer by decomposing a raw material gas comprising at least a hydrocarbon using a high frequency power with an oscillation frequency of 50 MHz to 450 MHz,
- wherein said surface protective layer has a thickness of 100 to 10,000 .ANG. and an etched surface, said etched surface covered by fluorine atoms, wherein said etched surface covered by fluorine atoms being formed by etching a 20 .ANG. or more thick surface side layer region of said surface protective layer comprising said non-single crystalline carbon material at an etching speed of 0.1 to 50 .ANG./sec. in an atmosphere containing a fluorine-containing plasma produced by decomposing a fluorine-containing gas using a high frequency power with an oscillation frequency of 50 MHz to 450 MHz.