Organic thin film device

An organic thin filn device having) an organic thin film consisting essentially of a mixed-stacked charge-transfer complex,

• wherein the organic thin filn contains n species of donor molecule D.sub.1 . . . D.sub.n and m species of acceptor molecule A.sub.1 . . . A.sub.m (n and m are integers satisfying n+m>2) and forms mixed crystal represented by the following formula:
• (D.sub.1).sub.x1 . . . (D.sub.n).sub.xn -(A.sub.1).sub.y1 . . . (A.sub.m).sub.ym
• where x.sub.i (i=1 to n) is the molar fraction of donor molecule D.sub.i ;
• y.sub.j (j=1 to m) is the molar fraction of acceptor molecule A.sub.j ;
• x.sub.1 + . . . +x.sub.n =1;
• and y.sub.1 + . . . +y.sub.m =1,
• and wherein the combinations of a donor and an acceptor molecules consist of a group forming neutral complex crystal and a group forming an ionic complex crystal
• where the difference I.sub.i -E.sub.j between the ionization potential I.sub.i of donor D.sub.i and the electron affinity E.sub.j of acceptor A.sub.j is 4.1 eV or less in said ionic complex crystal.

An organic thin film device having an organic thin film consisting essentially of a mixed-stacked charge-transfer complex,

• wherein the organic thin film contains n species of donor molecule D.sub.1 . . . D.sub.n and m species of acceptor molecule A.sub.1 . . . A.sub.m (n and m are integers satisfying n+m>2) and forms mixed crystal represented by the following formula:
• (D.sub.1).sub.x1 . . . (D.sub.n).sub.xn -(A.sub.1).sub.y1 . . . (A.sub.m).sub.ym
• where x.sub.i (i=1 to n) is the molar fraction of donor molecule D.sub.i y.sub.j (j=1 to m) is the molar fraction of acceptor molecule A.sub.j ;
• x.sub.1 + . . . +x.sub.n =1;
• and y.sub.1 + . . . +y.sub.m =1,
• and wherein the combinations of a donor and an acceptor molecules consist of a group forming ionic complex crystal and a group forming a neutral complex crystal
• where the difference I.sub.j -E.sub.j between the ionization potential I.sub.i of donor D.sub.i and the electron affinity E.sub.j of acceptor A.sub.j is 4.1 eV or more in said neutral complex crystal.