Method for plasma etching of a perovskite oxide thin film
AssigneeSony Corporation
InventorJunichi Sato
Life of this patent
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Abstract
A method for the plasma etching of a ferrodielectric perovskite oxide thin film such as PZT which comprises providing a resist pattern from on a perovskite oxide thin film as an etching mask, and subjecting the thin film to plasma etching using an etching gas which includes a compound having at least carboxyl group in the molecule, so that the carbonyl group formed by dissociation of the compound having at least carboxyl group in the molecule reacts with constituent metals of the perovskite oxide to efficiently form a reaction product in the form of a metal complex, enabling one to effect plasma etching at a practical etching rate while ensuring good anisotropic processing.
Claims18
A method for the plasma etching of a perovskite oxide thin film comprising the steps of:
- forming a resist pattern on a perovskite oxide thin film as an etching mask;
- and
- patterning said perovskite oxide thin film by means of an etching gas which includes a compound having at least one carboxyl group in the molecule.
A method for the plasma etching of a perovskite oxide thin film comprising the steps of:
- forming a resist pattern on a perovskite oxide thin film as an etching mask;
- and
- patterning said perovskite oxide thin film by means of an etching gas which includes a compound having at least two carboxyl groups in the molecule.
Dependencies are inferred from the claim text.