Apparatus for producing polycrystalline semiconductors
AssigneeSharp Kabushiki Kaisha
InventorTetsuhiro Okuno
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Abstract
A process and an apparatus for producing a polycrystalline semiconductor including charging a raw semiconductor material into a crucible, heating to melt the raw semiconductor material in the crucible by heating means, solidifying the melted material while depriving the bottom of the crucible of heat, and then cooling the crucible to cool the solidified semiconductor, in an atmosphere inert to the semiconductor throughout, characterized by alternately subjecting the semiconductor crystal to growth and annealing in the solidification step while periodically varying the amount of heat liberated from the raw semiconductor material.
Claims2
An apparatus for producing polycrystalline semiconductors comprising:
- an airtight vessel;
- a crucible having a bottom placed in the airtight vessel for receiving a raw semiconductor material;
- heating means for heating the crucible at a level above the crucible bottom to melt the raw semiconductor material;
- a supporting bed which supports the underside of the bottom of the crucible to mount the crucible, and has a hollow structure which allows an adiabatic piece to be loaded in and unloaded from the hollow structure;
- cooling means for cooling the supporting bed;
- and
- driving means for driving rotation of the supporting bed about a vertical axis thereof, as well as for driving upward and downward movement of the supporting bed.
Dependencies are inferred from the claim text.