Diamond film growth argon-carbon plasmas
AssigneeThe University of Chicago
InventorsDieter M. Gruen, Alan R. Krauss, Shengzhong Liu, Xianzheng Pan, Christopher D. Zuiker
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Abstract
A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.
Claims11
A method for manufacturing a diamond film on a substrate, comprising the steps of:
- (a) forming a carbonaceous vapor selected from the group consisting of a fullerene:
- fragments thereof;
- and a hydrocarbon;
- (b) providing a gas stream consisting essentially of argon and hydrogen and combining said carbonaceous vapor with said gas stream;
- (c) passing said combined carbonaceous vapor and gas stream into a chamber;
- (d) forming a plasma in said chamber;
- and
- (e) depositing said already fragmented carbon dimer species onto said substrate to form said diamond film.
A system for manufacturing a diamond film on a substrate, comprising:
- a source for providing a carbonaceous vapor;
- means for providing an argon and hydrogen gas stream and combining said carbonaceous vapor with said gas stream to form a combined gas atmosphere;
- a chamber for receiving said combined carbonaceous vapor and noble gas stream;
- and
- a microwave energy source for producing a microwave field within said chamber, the microwave field causing formation of a plasma containing excited carbonaceous species and excited gas stream, thereby resulting in accumulation of said diamond film on said substrate.
Dependencies are inferred from the claim text.