Apparatus for laser ion doping

An apparatus for forming a semiconductor device comprising:

• a chamber in which a semiconductor film comprising silicon formed on a substrate is provided;
• means for transferring the substrate in a direction;
• means for introducing a gas containing a dopant species into the chamber;
• means for irradiating the semiconductor film with a laser light through a window having a slit shape while transferring the substrate so that the dopant species is introduced into the semiconductor film;
• and
• means for heating the semiconductor film during a laser light irradiation.

An apparatus for forming a semiconductor device comprising:

• a chamber in which a semiconductor film comprising silicon formed on a substrate is provided;
• means for transferring the substrate in a direction;
• means for introducing a gas containing a dopant species into the chamber;
• means for applying an electromagnetic energy to the gas in order to activate the gas;
• and
• means for irradiating the semiconductor film with a laser light through a window having a slit shape while transferring the substrate so that the dopant species is introduced into the irradiated portion of the semiconductor film.

An ion doping apparatus comprising:

• a chamber;
• means for introducing a gas containing dopant species into the chamber;
• means for producing a plasma of said gas;
• a substrate holder for holding a substrate in said chamber;
• and
• accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from said plasma simultaneously into the entirety of a line-shaped target portion of said substrate, said accelerating means having a variable position relative to said substrate.

An ion doping apparatus comprising:

• a chamber;
• means for introducing a gas containing dopant species into the chamber;
• means for producing a plasma of said gas;
• a substrate holder for holding a substrate in said chamber;
• doping means for introducing said dopant species from said plasma selectively into a portion of said substrate, said portion extending longitudinally in one direction on a surface of said substrate;
• and
• means for producing relative motion between said substrate and said doping means in a direction orthogonal to said one direction.

An ion doping apparatus comprising:

• a chamber;
• means for introducing a gas containing dopant species into the chamber;
• means for producing a plasma of said gas;
• a substrate holder for holding a substrate in said chamber;
• and
• means for introducing said dopant species from said plasma selectively and simultaneously into the entirety of a line-shaped portion of said substrate.

An ion doping apparatus comprising:

• a chamber;
• means for introducing a gas containing dopant species into the chamber;
• means for producing a plasma of said gas;
• a substrate holder for holding a substrate in said chamber;
• accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from said plasma simultaneously into the entirety of a line-shaped target portion of said substrate extending longitudinally in one direction;
• and
• means for producing relative motion between said substrate and said accelerating means in a direction orthogonal to said one direction.

An ion doping apparatus comprising:

• a chamber;
• means for introducing a gas containing dopant species into the chamber;
• a substrate holder for holding a substrate in said chamber;
• means for producing a plasma of said gas by applying a field in a first direction parallel to a surface of said substrate;
• and
• accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from the plasma into a target portion of the substrate in a second direction perpendicular to said surface of said substrate.

An ion doping apparatus comprising:

• a chamber;
• means for introducing a gas containing PH.sub.3 or B.sub.2 H.sub.6 dopant species into the chamber;
• means for producing a plasma of said gas;
• a substrate holder for holding a substrate in said chamber;
• exhaust means including at least one of a turbomolecular pump and a cryo-pump for evacuating said chamber;
• accelerating means for applying additional energy to the plasma to accelerate introduction of said dopant species from said plasma into a portion of said substrate.