Method for fabricating an array of edge electron emitters

A method for fabricating an array of edge electron emitters, comprising the steps of:

• providing a plate shaped, dielectric supporting substrate having a first planar surface and a second planar surface positioned in parallel opposed relationship with a selected thickness therebetween;
• forming a plurality of parallel, laterally spaced apart first grooves in the first planar surface to a first depth thereby realizing a plurality of lands;
• forming a second groove in the second planar surface to a second depth, positioning the second groove so that the second groove crosses each of the plurality of parallel, laterally spaced apart first grooves at an angle, the first and second depths combined being greater than the thickness of the supporting substrate so that a plurality of openings are formed through the supporting substrate one each at the areas of regions wherein one of the first grooves crosses the second groove;
• forming an extraction electrode including the step of depositing, on the surfaces defining the first grooves and facing the openings and on the surfaces defining the second groove, a layer of a conductive material, the extraction electrode defining on said portion of the surfaces defining the first grooves a plurality of gates;
• forming a dielectric layer on the first planar surface of the supporting substrate;
• forming an emission structure on the dielectric layer, the emission structure being spaced a predetermined vertical distance from an adjacent one of plurality of gates by the dielectric layer;
• forming a plurality of cathodes on the emission structure, the plurality of cathodes being disposed one each on the plurality of lands so that each of the plurality of cathodes extends over the length of one of the plurality of lands;
• forming a masking film on the plurality of cathodes and on the emission structure, the masking film having a convex curved surface and a thin outer edge;
• removing an outer, radial portion of the masking film thereby retracting the thin outer edge of the masking film to a predetermined lateral position with respect to an edge of the adjacent one of plurality of gates of the extraction electrode;
• and
• selectively etching the emission structure to define an edge of the emission structure, the adjacent one of plurality of gates of the extraction electrode defining one of the plurality of edge electron emitters including an addressable portion of the edge of the emission structure
• thereby disposing each of the plurality of edge electron emitters at a predetermined position wherein optimum electric field conditions and electron emission conditions exist.