US 5,848,088 A · Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same

Abstract

A surface emission type semiconductor laser having an optical detector which can satisfactorily assure both the laser emission characteristics of the photoemitter and the optical-to-electrical conversion efficiency. The laser comprises a first conducting semiconductor layer and a second conducting semiconductor layer formed on first and second regions of a semiconductor substrate. Over the second conducting semiconductor layer on the first region is formed an optical resonator which emits light perpendicular to the plane of the semiconductor substrate. On the second region, at least one photodiode is formed by the first and second conducting semiconductor layers. On the first region the second conducting semiconductor layer is formed with a thickness of at least 1 .mu.m, and is used as a lower electrode for supplying a current to the optical resonator. On the second region, the second conducting semiconductor layer forming the at least one photodiode is formed with a thickness of less than 1 .mu.m after etching.

Claims29

Dependent claims

A surface emission type semiconductor laser having an optical detector, comprising:

a semiconductor substrate having first and second regions formed therein;
a first conducting semiconductor layer formed on each of said first and second regions;
a second conducting semiconductor layer formed on each of said first and second regions of said first conducting semiconductor layer;
and
an optical resonator formed on said second conducting semiconductor layer on said first region, and said optical resonator emitting light in a direction perpendicular to said semiconductor substrate;
wherein said second conducting semiconductor layer on said first region has a thickness of at least 1 .mu.m, and is used as a lower electrode for supplying a current to said optical resonator;
and
said first and second conducting semiconductor layers form at least one photodiode on said second region, and said second conducting semiconductor layer forming said at least one photodiode has a thickness of less than 1 .mu.m.

5 more elements

A method of manufacturing a surface emission type semiconductor laser having an optical detector wherein a surface emission type semiconductor laser is formed on a first region of a semiconductor substrate, and at least one photodiode is formed on a second region of said semiconductor substrate, comprising the steps of:

(a) successively epitaxially growing on each of said first and second regions a first conducting semiconductor layer, a second conducting semiconductor layer having a thickness of at least 1 .mu.m, and an optical resonator formed from a pair of reflecting mirrors and a multilayer semiconductor layer formed therebetween excluding the reflecting mirror on the emission side;
(b) etching an upper layer of said multilayer semiconductor layer including at least a cladding layer to form a pillar portion on said first region of said epitaxial growth layers;
(c) embedding an insulating layer in the periphery of said pillar portion;
(d) forming an upper electrode having an opening formed therein at the end surface of said pillar portion;
(e) forming the mirror on the light emitting side to cover said opening;
and
(f) etching said epitaxial growth layer in said second region, said etching step is terminated leaving a part of said second conducting semiconductor layer so that said second conducting semiconductor layer on said second region has a thickness of less than 1 .mu.m.

4 more elements

Dependencies are inferred from the claim text.

Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same

Life of this patent

Surface emission type semiconductor for laser with optical detector, method of manufacturing thereof, and sensor using the same

Life of this patent

Abstract

Claims29