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US 5,848,085 AGranted
Semiconductor quantum well structure and semiconductor device using the same
AssigneeCanon Kabushiki Kaisha
InventorJun Nitta
Life of this patent
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AssigneeCanon Kabushiki Kaisha
InventorJun Nitta
Estimating the term…
A semiconductor quantum well structure having at least two quantum wells, each having an electron quantum level, a heavy hole quantum level and a light hole quantum level. In the two quantum wells, only their respective heavy hole quantum levels or their respective light hole quantum levels coincide with each other. Further, there is a construction in which a barrier portion between the two quantum wells has a thickness and a band gap which allow connecting the wave functions of the respective electrons between the two quantum wells. Alternatively, the thickness and band gap of the barrier allow the connection between the quantum wells of the wave functions of those holes whose quantum levels coincide with each other. In order to set the hole quantum level to a desired quantum level, a specific construction imparts an appropriate strain to the quantum wells.
A semiconductor quantum well structure comprising:
A semiconductor device including a semiconductor quantum well structure comprising:
A semiconductor quantum well structure comprising:
A semiconductor device including a semiconductor quantum well structure comprising:
Dependencies are inferred from the claim text.