Oxidation simulation method
AssigneeNEC Corporation
InventorShigetaka Kumashiro
Life of this patent
Estimating the term…
Loading patent…
AssigneeNEC Corporation
InventorShigetaka Kumashiro
Estimating the term…
High-speed simulation of oxidation is performed even when an overlap occurs between oxide-film shapes. A sweeping quadrilateral is defined accompanying the growth of an oxide film from a line segment composing the surface of the oxide film before the growth, the line segment on the surface of an oxide film after the growth and the dislocation vectors of both ends in these segments. The overlap width of the oxide-film shapes is then acquired by a predetermined figure calculation of these sweeping quadrilaterals between them. A linear estimation is made on the time axis when an overlap between the oxide-film shapes occurs. The growth time of the oxide film is retrogressed so that the overlap width of said oxide-film shapes decreases below a previously specified allowable value. Thereafter, the oxidation simulation is continued with this state made into a renewed initial state.
An oxidation simulation method comprising the steps of:
An oxidation simulation method comprising the steps of:
Dependencies are inferred from the claim text.