Solid-state image sensing device

A solid-state image sensing device comprising:

• a photodiode for producing a charge in correspondence with an intensity of light thereby, said photodiode having a first terminal set at a first reference voltage level and a second terminal for outputting the produced charge, and the first reference voltage level falling within a range between second and third reference voltage levels;
• a first feedback capacitive element having a first terminal which directly receives the charge output from the second terminal of said photodiode;
• a first amplifier having a signal input terminal connected to the first terminal of said first feedback capacitive element, the signal input terminal of said first amplifier being virtually set at the first reference voltage level, and an output terminal of said first amplifier being connected to a second terminal of said first feedback capacitive element;
• a first step charge generator for producing a step charge on the basis of the second and third reference voltage levels, the first step charge generator supplying the step charge to said first feedback capacitive element;
• a voltage comparator for receiving a first integral voltage signal output from said first amplifier, comparing a voltage of the first integral voltage signal with the first reference voltage level, and outputting a comparison result signal;
• a binary sampling circuit for receiving the comparison result signal, and sampling the comparison result signal to binarize the comparison result signal;
• and
• a fundamental timing generation circuit for generating a first clock signal and a second clock signal being at logical false level when the first clock signal is at logical truth level and changing to logical truth level during a period included in a logical false level period of the first clock signal, outputting the first and second clock signals to said first step charge generator, and outputting the first clock signal to said binary sampling circuit.