Method and apparatus for structure characterization of layered semiconductors
AssigneeMassachusetts Technological Laboratory, Inc.
InventorsHoton How, Ta-Ming Fang
Life of this patent
Estimating the term…
Abstract
A new technique is presented which exploits AC Hall effect in the characterization of layered semiconductor structures. The method involves the use of laser signals by means of optical fibers in the presence of a DC magnetic bias field. Upon incidence the polarization of the optical signal is rotated via a Lorentz force due to the AC Hall effect. As such, the reflected waves carry informations on the Hall mobility of the charge carriers. The calculations show that AC Hall reflection coefficient warrants sufficient intensity to be measured. Our theory is complete in the sense that depth profiling has been explicitly incorporated in the formulation.
Claims10
A Hall effect method of characterizing a semiconductor sample to obtain data on carrier concentrations and mobilities comprising applying a direct current magnetic field normal to a sample, applying an optical signal to said sample, measuring variations in the optical signal as said signal is reflected by said sample and comparing said measured variations with analytical calculations.
A Hall effect apparatus for characterizing a semiconductor sample to obtain data on carrier concentrations and mobilities comprising means for providing a direct current magnetic field normal to a sample, means for providing an optical signal to said sample, means for reading said optical signal as it is relected by said sample, means for measuring variations in said reflected optical signal and means for comparing said measured variations with analytical calculations.
Dependencies are inferred from the claim text.