Field emission device including a resistive layer
AssigneeKabushiki Kaisha Toshiba
InventorsMasayuki Nakamoto, Tomio Ono
Life of this patent
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Abstract
A microelectronic field emission device includes a core layer (16) having at least one outward protuberance on a top surface of the core layer, and an emitter layer (15) formed on the core layer to cover at least a top portion of the outward protuberance, the material of the core layer having a larger electrical resistance than the material of the emitter layer, wherein the top portion of the outward protuberance culminates to a tip and a portion of the emitter layer (15) formed on the protuberance culminates to a tip. The microelectronic device may further include a substrate (19), a conductive layer (17), an anode electrode (53) including a phosphor layer, and a gate electrode (21) having an opening thereby exposing the tip of the emitter layer.
Claims16
A microelectronic device comprising:
- a conductive layer;
- a core layer formed on the conductive layer and having at least one outward protuberance on a surface opposite of the conductive layer;
- and
- an emitter layer formed on the core layer to cover at least a top portion of the outward protuberance, the material of the core layer having a larger electrical resistance than that of the material of the emitter layer;
- wherein the top portion of the outward protuberance culminates to a tip and a portion of the emitter layer formed on the protuberance culminates to a tip.
A micro vacuum tube, comprising:
- a substrate;
- a conductive layer formed on the substrate;
- a core layer formed on the conductive layer and having at least one outward protuberance on a surface opposite of the conductive layer;
- an emitter layer formed on the core layer to cover at least a top portion of the outward protuberance, wherein the top portion of the outward protuberance culminates to a tip and a portion of the emitter layer formed on the protuberance culminates to a tip and wherein a material of the core layer has a larger electrical resistance than that of a material of the emitter layer;
- a gate electrode layer, formed above the core layer, having an opening around the portion of the emitter layer formed on the top portion of the protuberance, thereby exposing the tip of the emitter layer;
- an anode electrode disposed above the tip of the emitter layer;
- and
- a spacer disposed between the substrate and the anode electrode to create a gap between the anode electrode and the tip of the emitter layer.
Dependencies are inferred from the claim text.