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US 5,847,437 AGranted
Rare-earth element-doped III-V compound semiconductor schottky diodes and device formed thereby
AssigneeNational Science Council
InventorsLiann-Be Chang, Hang-Thung Wang
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Abstract
A semiconductor device has an improved schottky barrier junction. The device includes: a substrate; an epitaxial layer covering the substrate and lightly doped with a dopant selected from a group consisting of a rare earth element and an oxide of a rare earth element; and a metal layer covering the epitaxial layer and forming said schottky barrier junction with said epitaxial layer.
Claims14
A semiconductor device having a schottky barrier junction, comprising:
- a substrate;
- a compound semiconductor epitaxial layer covering said substrate and lightly doped with a dopant selected from a group consisting of a rare earth element and an oxide of a rare earth element;
- and
- a metal layer covering said compound semiconductor epitaxial layer and forming said schottky barrier junction with said compound semiconductor epitaxial layer.
1 more element
Dependencies are inferred from the claim text.