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US 5,847,436 AGranted
Bipolar transistor having integrated thermistor shunt
AssigneeKabushiki Kaisha Tokai Rika Denki Seisakusho
InventorHitoshi Iwata
Life of this patent
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Abstract
A bipolar transistor includes a chip having a base electrode and an emitter electrode on a surface thereof and a film resistor provided on a surface of the chip and electrically connecting the base electrode and the emitter electrode to each other, the film resistor having a negative resistance characteristic with temperature change.
Claims1
A bipolar transistor comprising:
- a chip having a base electrode and an emitter electrode on a surface thereof;
- and
- a thermistor film provided on a surface of said chip, and electrically connecting said base electrode and said emitter electrode to each other, wherein said thermistor film is provided in such a manner as to cover the whole space between said base electrode and said emitter electrode, and said thermistor film having a thickness and width to provide a predetermined negative resistance characteristic so that when heat generated from said chip reaches a predetermined temperature, the predetermined resistance of said thermistor film is abruptly decreased, automatically rendering the bipolar transistor non-conductive and protecting the bipolar transistor from thermal destruction.
Dependencies are inferred from the claim text.