US 5,847,434 A · Semiconductor integrated circuit device and process for manufacturing the same

Abstract

A semiconductor integrated circuit device is provided which includes a memory cell M, in which a capacitance element C is added to the storage node portion of an inverter circuit composed of a drive MOSFET and a load TFT Qf. The device also includes and a bipolar transistor Tr provided as a peripheral element. A reference power supply line to be connected with the source region of the drive MOSFET Qd and an emitter electrode to be connected with the emitter region of the bipolar transistor Tr are formed of an uppermost thick polycrystal silicon film. Moreover, an intermediate thin polycrystal silicon film between the uppermost polycrystal silicon film and a first polycrystal silicon film (or polycide film) is covered in a memory cell forming region with the uppermost polycrystal silicon film. Still moreover, the uppermost polycrystal silicon film is partially silicified.

Claims21

Dependent claims

A semiconductor integrated circuit device comprising:

a memory cell having an inverter circuit including a drive MISFET and a load TFT;
and
a bipolar transistor,
wherein a source region of said drive MISFET and an emitter region of said bipolar transistor are formed in a semiconductor substrate, and
wherein the semiconductor integrated circuit device is formed as a multi-layer structure which includes a plurality of polycrystal silicon films, and a reference power supply line coupled to the source region of said MISFET and an emitter electrode coupled to the emitter region of said bipolar transistor are formed of an uppermost one of said plurality of polycrystal silicon films.

2 more elements

Dependencies are inferred from the claim text.

Semiconductor integrated circuit device and process for manufacturing the same

Life of this patent

Semiconductor integrated circuit device and process for manufacturing the same

Life of this patent

Abstract

Claims21