Light emitting device having current blocking structure

A photosemiconductor device, in which an optical waveguide containing an active layer is directly formed on a first electrical conduction type semiconductor substrate by selective growth;

• a lateral surface of said optical waveguide is buried with a semiconductor multilayer structure containing a first electrical conduction type semiconductor layer and a second electrical conduction type semiconductor layer;
• a partial area of said second electrical conduction type semiconductor layer is inverted to a first electrical conduction type;
• and the lateral surface of the optical waveguide comprises a (111)B plane.

A photosemiconductor device, in which a second electrical conduction type semiconductor layer is formed on a first electrical conduction type semiconductor substrate;

• an optical waveguide containing an active layer is directly formed thereon by selective growth process, a lateral surface of said optical waveguide is buried with a semiconductor multilayer structure containing a first electrical conduction type semiconductor layer and an additional second electrical conduction type semiconductor layer;
• said second electrical conduction type semiconductor layer is inverted to a first electrical conduction type at an area corresponding to said optical waveguide;
• and the lateral surface of the optical waveguide comprises a (111)B plane.