Differential amplifier circuit and analog buffer

A differential amplifier circuit comprising:

• a p-type or n-type thin-film transistor provided on an insulating surface,
• wherein said thin-film transistor comprises:
• source and drain electrodes;
• a semiconductor film provided on said insulating surface and having an inward radial direction of crystal growth from a region near to one of the source and drain electrodes to the other of the source and drain electrodes;
• and
• a gate electrode,
• wherein said gate electrode surrounds the other of the source and drain electrodes, and said one of the source and drain electrodes surrounds said gate electrode, and
• wherein said inward radial direction of crystal growth is substantially parallel with said insulating surface.

An analog buffer comprising:

• a p-type or n-type thin-film transistor provided on an insulating surface,
• wherein said thin-film transistor comprises:
• source and drain electrodes;
• a semiconductor film provided on said insulating surface and having an outward radial direction of crystal growth from one of the source and drain electrodes, to a region near to the other of the source and drain electrodes;
• and
• a gate electrode,
• wherein said gate electrode surrounds said one of the source and drain electrodes, and the other of the source and drain electrodes surrounds said gate electrode, and
• wherein said outward radial direction of crystal growth is substantially parallel with said insulating surface.

An analog buffer comprising:

• a p-type or n-type thin-film transistor provided on an insulating surface,
• wherein said thin-film transistor comprises:
• source and drain electrodes;
• a semiconductor film provided on said insulating surface and having an inward radial direction of crystal growth from a region near to one of the source and drain electrodes to the other of the source and drain electrodes;
• and
• a gate electrode,
• wherein said gate electrode surrounds the other of the source and drain electrodes, and said one of the source and drain electrodes surrounds said gate electrode, and
• wherein said inward radial direction of crystal growth is substantially parallel with said insulating surface.

An electro-optical device comprising:

• a pair of thin-film transistors having one of p-type and n-type provided on an insulating surface,
• wherein each of said thin-film transistors comprises:
• source and drain electrodes;
• a semiconductor film provided on said insulating surface and having an outward radial direction of crystal growth from one of the source and drain electrodes to a region near to the other of the source and drain electrodes;
• and
• a gate electrode,
• wherein said gate electrode surrounds said one of the source and drain electrodes, and the other of the source and drain electrodes surrounds said gate electrode in at least one of said thin-film transistors, and
• wherein said outward radial direction of crystal growth is substantially parallel with said insulating surface, and
• wherein said thin-film transistors are patterned adjacent to each other.

An electro-optical device comprising:

• a pair of thin-film transistors having one of p-type and n-type provided on an insulating surface,
• wherein each of said thin-film transistors comprises:
• source and drain electrodes;
• a semiconductor film provided on said insulating surface and having an inward radial direction of crystal growth from a region near to one of the source and drain electrodes to the other of the source and drain electrodes;
• and
• a gate electrode,
• wherein said gate electrode surrounds the other of the source and drain electrodes, and said one of the source and drain electrodes surrounds said gate electrode in at least one of said thin-film transistors,
• wherein said inward radial direction of crystal growth is substantially parallel with said insulating surface, and
• wherein said thin-film transistors are patterned adjacent to each other.

An electro-optical device comprising:

• a thin-film transistor provided on an insulating surface,
• wherein said thin-film transistor comprises:
• source and drain electrodes;
• a semiconductor film provided on said insulating surface and having an outward radial direction of crystal growth from one of the source and drain electrodes to a region near to the other of the source and drain electrodes;
• a gate electrode;
• and
• a pixel electrode connected with said one of the source and drain electrodes,
• wherein said gate electrode surrounds said one of the source and drain electrodes, and the other of the source and drain electrodes surrounds said gate electrode, and
• wherein said outward radial direction of crystal growth is substantially parallel with said insulating surface.

An electro-optical device comprising:

• a thin-film transistor provided on an insulating surface,
• wherein said thin-film transistor comprises:
• source and drain electrodes;
• a semiconductor film provided on said insulating surface and having an inward radial direction of crystal growth from a region near to one of the source and drain electrodes to the other of the source and drain electrodes;
• a gate electrode;
• and
• a pixel electrode connected with the other of the source and drain electrodes,
• wherein said gate electrode surrounds the other of the source and drain electrodes, and said one of the source and drain electrodes surrounds said gate electrode, and
• wherein said inward radial direction of crystal growth is substantially parallel with said insulating surface.

An electro-optical device comprising:

• a peripheral circuit comprising a thin-film transistor provided on an insulating surface,
• wherein said thin-film transistor comprises:
• source and drain electrodes;
• a semiconductor film provided on said insulating surface and having an outward radial direction of crystal growth from one of the source and drain electrodes to a region near to the other of the source and drain electrodes;
• and
• a gate electrode,
• wherein said gate electrode surrounds said one of the source and drain electrodes, and the other of the source and drain electrodes surrounds said gate electrode, and
• wherein said outward radial direction of crystal growth is substantially parallel with said insulating surface.

An electro-optical device comprising:

• a peripheral circuit comprising a thin-film transistor provided on an insulating surface,
• wherein said thin-film transistor comprises:
• source and drain electrodes;
• a semiconductor film provided on said insulating surface and having an inward radial direction of crystal growth from a region near to one of the source and drain electrodes to the other of the source and drain electrodes;
• and
• a gate electrode,
• wherein said gate electrode surrounds the other of the source and drain electrodes, and said one of the source and drain electrodes surrounds said gate electrode, and
• wherein said inward radial direction of crystal growth is substantially parallel with said insulating surface.