Semiconductor device and a method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsMasakazu Kakumu, Masaaki Kinugawa
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Abstract
A plurality of silicon insulating films are formed to separate regions to be formed with elements from each other on a silicon semiconductor substrate. Silicon layers are formed by an epitaxially growing method on the regions to be formed with the elements and the silicon insulating film. An MOS transistor is formed on the monocrystalline silicon layer formed on the regions to be formed with the elements of the silicon layer, and the polysilicon layer formed on the silicon insulating film is used as a high resistance element or doped with an impurity as a conductor line.
Claims1
A static semiconductor memory comprising:
- a first transistor formed on a semiconductor substrate,
- an insulating film formed on the first transistor except part of a gate electrode of said first transistor;
- an epitaxial layer formed on the insulating film, an exposed portion of said gate electrode, and the semiconductor substrate separated from said first transistor, and
- a portion of a second transistor formed on a first portion of said epitaxial layer on said semiconductor substrate,
- wherein said first portion of said epitaxial layer is of a single crystalline structure, and a second portion of said epitaxial layer is of a polycrystalline structure on the insulating film, and said second portion of said epitaxial layer on the insulating film is used as a high resistance load element.
Dependencies are inferred from the claim text.