Semiconductor electro-optical device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorSetsuo Nakajima
Life of this patent
Estimating the term…
Abstract
A display device comprising a pixel portion having a thin film transistor using silicon as a semiconductor layer and a pixel electrode connected to the thin film transistor, wherein: said pixel electrode having a first transparent electrically conductive film electrically connected to said semiconductor layer and a second transparent electrically conductive film disposed on the first transparent electrically conductive film; said first transparent electrically conductive film comprises an oxide layer of a first metal having an oxidation potential lower than that of silicon; and said second transparent electrically conductive film comprises an oxide layer of a second metal having an oxidation potential higher than that of silicon. Also claimed is a process for fabricating the display device.
Claims10
An electro-optical device comprising a pixel portion having a thin film transistor using silicon as a semiconductor layer and a pixel electrode connected to the thin film transistor,
- wherein said pixel electrode comprises a first transparent electrically conductive film electrically connected to said semiconductor layer and a second transparent electrically conductive film disposed on the first transparent electrically conductive film,
- said first transparent electrically conductive film comprises an oxide layer of a first metal having an oxidation potential lower than that of silicon, and
- said second transparent electrically conductive film comprises an oxide layer of a second metal having an oxidation potential higher than that of silicon.
An electro-optical device comprising a pixel portion having a thin film transistor using a semiconductor layer comprising silicon and a pixel electrode connected to the thin film transistor,
- wherein said pixel electrode having a first transparent electrically conductive film electrically connected to said semiconductor layer and a second transparent electrically conductive film placed on the first transparent electrically conductive film,
- said first transparent electrically conductive film comprises an oxide layer obtained by oxidizing by heat treatment a first metal having an oxidation potential lower than that of silicon, and
- said second transparent electrically conductive film comprises an oxide layer of a second metal having an oxidation potential higher than that of silicon.
An electro-optical device comprising a pixel portion having a thin film transistor using a semiconductor layer comprising silicon and a pixel electrode electrically connected to said thin film transistor,
- wherein said pixel electrode comprises a titanium oxide film electrically connected to said semiconductor layer and an indium oxide film disposed on the titanium oxide film.
An electro-optical device comprising a pixel portion having a thin film transistor using a semiconductor layer comprising silicon and a pixel electrode connected to said thin film transistor,
- wherein said pixel electrode comprises a titanium oxide film electrically connected to said semiconductor layer and a metal compound film comprising an indium oxide in contact with said titanium oxide film.
An electro-optical device comprising:
- a first electrically conductive film comprising an oxide layer of a first metal electrically connected to a semiconductor layer comprising silicon;
- and
- a second electrically conductive film comprising an oxide layer of a second metal,
- wherein said first metal has an oxidation potential lower than that of said second metal.
Dependencies are inferred from the claim text.