Semiconductor substrate cleaning solutions, methods of forming the same, and methods using the same

A method of cleaning a semiconductor substrate, said method comprising the steps of:

• contacting a semiconductor substrate having contaminants contained thereon with a cleaning solution consisting essentially of hydrofluoric acid, hydrogen peroxide, isopropyl alcohol, and water, wherein said hydrogen peroxide is present in said cleaning solution in a volumer ratio ranging from about 5:1 to about 15:1 based on the volume of said hydrofluoric acid, wherein said isopropyl alcohol is present in said cleaning solution in a volume ratio ranging from about 40:1 to about 60:1 based on the volume of said hydrofluoric acid, and wherein said water is present in said cleaning solution in a volume ratio ranging from about 40:1 to about 60:1 based on the volume of said hydrofluoric acid;
• contacting the semiconductor substrate with a first bath of water;
• contacting the semiconductor substrate with a second bath of water;
• and
• rotating the semiconductor substrate to remove water remaining thereon and clean the semiconductor substrate.