Plasma treatment method
AssigneeFujitsu Limited
InventorsTakeshi Kamata, Hiroshi Arimoto, Makoto Kosugi, Koichi Hashimoto
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Abstract
In a plasma equipment and a plasma treatment method of a semiconductor device capable of reducing electron shading effect and also suppressing charge damage without affecting various characteristics in plasma process, a distance between a substrate bias electrode and A counter electrode is set less than two times as long as a mean free path of electron. High frequency electric power of 100 kHz to 1 MHz is supplied to the substrate bias electrode, while high frequency electric power of 1 MHz to 100 MHz is supplied to the counter electrode.
Claims24
A plasma treatment method comprising the steps of:
- loading a semiconductor wafer on a first electrode in a chamber;
- arranging a second electrode to oppose to said first electrode by a distance less than two times as long as a mean free path of electron;
- and
- generating plasma in said chamber by supplying gas to said chamber, supplying high frequency electric power of first frequency to said first electrode, and supplying high frequency electric power of second frequency which is higher than said first frequency to said second electrode.
A plasma treatment method comprising the steps of:
- loading a semiconductor wafer on a first electrode in a chamber;
- arranging a second electrode to oppose to said first electrode by a distance less than two times as long as a mean free path of electron;
- supplying a first high frequency electric power of a first frequency to said first electrode;
- supplying gas to said chamber;
- and
- generating plasma in a space between said first and second electrodes by applying energy to said gas without energy of said first and second electrodes.
A plasma treatment method comprising the steps of:
- loading a semiconductor wafer on a first electrode in a chamber;
- arranging a second electrode to oppose to said first electrode by a distance less than two times as long as a mean free path of electron;
- supplying a first high frequency electric power of a first frequency to said second electrode;
- supplying gas to said chamber;
- and
- generating plasma in a space between said first and second electrodes by applying energy to said gas without energy of said first and second electrodes.
Dependencies are inferred from the claim text.