Contact structure for vertical chip connections

A process for producing a contact structure of a semiconductor component, comprising the steps of:

• in a first step, producing a layer structure on a top side of a substrate to such an extent that a contact portion selected from the group consisting of:
• a contact layer, which is made of semiconductor material and with which a metal pin is to make contact, and a conductor track and a metal contact is present,
• in a second step, using a mask to remove said layer structure and the substrate in anisotropic etching steps from the top side toward an underside in a region of a metal pin to be produced,
• in a third step, introducing metal into said region to produce the metal pin, and
• in a fourth step, removing the underside of the substrate at least to a level exposing an end of the metal pin produced in the third step.