Method of manufacturing semiconductor integrated circuit device
AssigneeHitachi, Ltd.
InventorsTakashi Hashimoto, Hideo Miura, Toshiyuki Kikuchi, Toshiyuki Mine, Yoichi Tamaki, Takahiro Kumauchi
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Abstract
A method of manufacturing a bipolar transistor having an improved polysilicon emitter is disclosed. More specifically, hydrogen terminations or OH group terminations adhered (bonded) to an emitter-forming region are eliminated by a heat treatment in an inert gas atmosphere before forming emitter polysilicon. Subsequently, an amorphous silicon film for forming an emitter polysilicon is formed at a low temperature.
Claims10
A method of manufacturing a semiconductor integrated circuit device having bipolar transistors comprising the steps of:
- (a) providing a substrate having a main surface of silicon whose crystal orientation is (100);
- (b) wet cleaning an emitter-forming region of the main surface of the substrate;
- (c) after the step (b), applying a first heat treatment to the substrate;
- (d) after the step (c), forming an amorphous silicon film containing impurities of a first conductivity type on the main surface of the substrate including the emitter-forming region by chemical vapor deposition;
- and
- (e) after the step (d), applying a second heat treatment to the substrate to diffuse the impurities of the first conductivity type in the amorphous silicon film into the main surface of the substrate and to crystallize the amorphous silicon film, thereby forming a first conductivity type emitter region and forming a polycrystalline silicon film whose crystal grains have a (111) orientation on the first conductivity type emitter region.
A method of manufacturing a semiconductor integrated circuit device having bipolar transistors, comprising the steps of:
- (a) providing a semiconductor substrate having a main surface of silicon whose crystal orientation is (100);
- (b) wet cleaning an emitter-forming region of the main surface of silicon;
- (c) after the step (b), subjecting the semiconductor substrate to a first heat treatment, thereby eliminating hydrogen and OH-group terminations on the emitter-forming region of the main surface of silicon;
- (d) after the step (c), forming an amorphous silicon film including impurities on the emitter-forming region of the main surface of silicon by chemical vapor deposition;
- and
- (e) after the step (d), subjecting the semiconductor substrate to a second heat treatment to diffuse the impurities into the emitter-forming region of the main surface of silicon and the crystallize the amorphous silicon film, to form an emitter region in the emitter-forming region of the main surface of silicon and a polycrystalline silicon film, whose grains are oriented to (111) direction, on the emitter region.
Dependencies are inferred from the claim text.