Method for forming a walled-emitter transistor
AssigneeIntegrated Device Technology, Inc.
InventorsChuen-Der Lien, Kyle Wendell Terrill
Life of this patent
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Abstract
An embodiment of the present invention is a process for semiconductor device having a silicon substrate. The process comprises positioning at least one field implant mask and field implanting a silicon substrate around a bipolar active region in a substrate such that boron atoms are blocked out of an active region, and only the field region surrounding the active area is implanted, the implanting such that a predetermined layout area of a semiconductor device does not need to be increased to compensate for a BV.sub.bso problem.
Claims24
A method of semiconductor fabrication of a bipolar transistor, the method comprising:
- forming wells in a substrate, using a first and second mask, said first mask being patterned separately from said second mask, and said wells being contiguous with an active region of said bipolar transistor;
- forming isolation regions to surround said bipolar active region;
- forming a base in contact with said bipolar active region that is physically separated from said isolation regions by said wells;
- and
- forming an emitter above said base.
A method of forming a bipolar transistor in a substrate containing a collector region comprising:
- 1) selectively implanting a dopant using a first and a second mask to form a well region, wherein no portion of said first mask is patterned when said second mask is patterned;
- 2) forming an isolation region using one of said masks;
- 3) forming a base in said substrate above said collector region;
- and
- 4) forming an emitter in a location above said base.
A method of semiconductor fabrication of a bipolar transistor, the method comprising:
- forming wells in a substrate, using a first and second mask, said wells being contiguous with an active region of said bipolar transistor;
- forming isolation regions using said second mask, wherein said second mask is not composed of a portion of said first mask;
- forming a base in contact with said bipolar active region;
- and
- forming an emitter above said base.
Dependencies are inferred from the claim text.